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为人工智能的未来提供动力:面向人工智能加速器的高功率密度解决方案.pdf

上传人: 明**** 编号:1011664 2025-12-21 17页 1.97MB

1、Surendhar SomasundaramPaul YeamanPowering the Future of AI:High Power Density Solutions for AI AcceleratorsCompute systems are thermally limitedAs GPU currents rise,heat from PDN losses limit compute powerLimiting PDN loss is critical to maximize compute powerLower core voltageBetter transient respo

2、nseEnable new compute architecturesWaferscaleenginesVertical Power Delivery(VPD)is necessary to minimize PDN lossesGrowing processor power requirements drive geometric PDN loss increaseVPD is required to keep pace with growing processor power demandPower Delivery Innovation:MotivationPower Delivery

3、Solutions for AI AcceleratorsModule(Vertical)Lumped PDN=10-15DiscretesubstrateMotherboardSOCModule(Lateral)substrateMotherboardSOCsubstrateMotherboardSOCsubstrateMotherboardSOCIntegrates power stage,inductor and capacitors into a single device,enabling more current to be sourced close to processorPD

4、N losses exceed 100W for GPU currents beyond 1100 1350ALowest cost,with established eco-system and quality recordPDN losses exceed 100W for GPU currents beyond 850-1000ALumped PDN=90-140Lumped PDN=55-80Module(Backside Lateral)Relocates the module to the backside of the motherboard,shortening the hig

5、h current path to GPUPDN losses exceed 100W for GPU currents beyond 1500 2000ALumped PDN=25-45Positions modules directly under processor,further shortening current pathPDN losses exceed 100W for GPU currents beyond 2500 3000AVR relocation under processor Improves PDN lossesAllows for more powerful G

6、PUsRequires significant system redesignBVMs will continue to improveMove closer to SOCImprove power densityChallenges will drive technology improvementsElectricalMechanical ThermalImpact of Vertical Power DeliveryGen 1 Module(Lateral):Dual Phase 160A,10 x9mm Higher Efficiency than equivalent discret

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根据报告的内容,全文主要探讨了AI加速器中高功率密度解决方案,特别是垂直电源传输(VPD)技术。以下是关键点: 1. **热限制与PDN损失**:计算系统受热限制,PDN损失限制了计算功率,降低核心电压和改善瞬态响应是关键。 2. **VPD技术**:VPD技术用于最小化PDN损失,以适应不断增长的处理器功率需求。 3. **模块类型**:包括横向模块、背面横向模块和垂直模块,功率密度从1.0A/mm²到2.0A/mm²不等。 4. **效率与热阻抗**:Gen 3模块(垂直)具有2.0A/mm²的功率密度,热阻抗低至0.5°C/W。 5. **系统热估计**:模块热估计考虑了冷板温度、TIM接触温度和模块温度变化。 6. **未来进展**:包括嵌入式BVM(SE-BVM)和背面垂直模块(BVM),旨在进一步减少PDN损失。 7. **VRM发展目标**:设计高密度可扩展架构,满足客户对功率密度的要求,并解决VPD的关键挑战。
AI加速器新动力?" 高功率密度解决方案揭秘" 垂直供电技术革新!"
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