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用于神经形态计算技术的硅兼容氧化铪基铁电体 - Athanatos Dimoulas.pdf

上传人: 拾亿 编号:751720 2025-07-29 17页 2.68MB

1、Vision Transformers with Ferroelectric OxidesCoordinatorETHZM.DelucaSALA.DimoulasNCSRDT.KaempfeFraunhoferYang-Ho GongSoongsil UKyeong-Sik MinKookmin UMin Hyuk ParkSeoul UD.KwonHanyang UL.Begon-LoursBridging Europe and South Korea toBuild the Next Generation of AI Chipshttps:/vitfox.eu/12ndROK-EU for

2、um,16thJune 2025,Jeju,ROKSi-compatible Hafnia-based ferroelectrics for neuromorphic computing technologiesVision Transformers-Specifications2Transformers:From natural language processing(e.g.GPT)to computer vision-Vision transformers replace Convolutional Neural Networks(CNN)for image recognition-Vi

3、T outperform CNN with 4x fewer computing resources.ViTFOX project objectives Design and fabrication of CIM demonstrator implementing a single layer network,comprising of:sense amplifiers,logic controller,32x32 epi-FTJ synaptic weights,32x32 1T-4C 3D FeRAM arrays Energy efficiency 30 TOPS/W,accuracy

4、90%Design circuit level simulator integrating:compact models of ferroelectric oxides,CMOS and peripherals energy efficiency 50 TOPS/Watt HW-SW co-optimization for ViT with ferroelectric oxides 30%energy improvement over DRAM2ndROK-EU forum,16thJune 2025,Jeju,ROKViTFOX strengthens the leading positio

5、n of EU and KoreaHafnia-based,Si-compatible ferroelectric electronics Pioneered in Europe(Germany)and significantly advanced by Korean researchers,members of this project.32ndROK-EU forum,16thJune 2025,Jeju,ROKStabilization of the ferroelectric phase:doping(Si,Zr,.),stress,annealing,film thickness D

6、iscovered in 2007-first published 2011,QimondaCompatible with Si processing T.S.Bscke et al,Appl.Phys.Lett.99,102903(2011)50%Zr H0.5Zr0.5O2(HZO)Fluorite Hafnia-based Ferroelectric Oxides42ndROK-EU forum,16thJune 2025,Jeju,ROK5Ferroelectric NVM“flavors”Versatility:Functionality,integration,applicatio

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本文介绍了ViTFOX项目,旨在开发基于氧化铁电材料的下一代AI芯片。关键点如下: 1. **Vision Transformers性能**:Vision Transformers (ViT) 在图像识别方面取代了卷积神经网络(CNN),以4倍的较少计算资源实现更优性能。 2. **项目目标**:设计并制造单层网络的演示器,实现>30 TOPS/W的能量效率和>90%的准确率。 3. **铁电氧化物**:Hafnia基铁电材料与硅兼容,由欧洲和韩国研究者共同推进,实现了稳定铁电相。 4. **技术挑战**:通过原子层蚀刻(ALE)和新型退火技术,解决铁电薄膜厚度缩放导致的退化问题。 5. **性能数据**:铁电隧道结(FTJ)展示出~31.8 μC/cm²的剩余极化强度和~0.5V的开关电压,循环耐久性超过10^9次。 6. **集成与优化**:提出前端CMOS与后端铁电随机存取存储器(FeRAM)的垂直集成,预期超过300 TOPS每瓦的能量效率。 7. **商业化路径**:项目成果FeRAM可直接转移到生产线,而FTJ的异质集成更具挑战性,但已有相应的技术支持方案。 这些成就为AI芯片技术的未来发展奠定了基础。
"硅兼容铁电氧化物如何变革AI芯片?" "下一代AI芯片的能耗能降低多少?" "ViTFOX项目如何桥接欧洲与韩国科技?"
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