探索研发实现从实验室到晶圆厂的转型 - Inge Asselberghs（比利时 IMEC）.pdf

1、Pathfinding R&D to enable transition from lab-to-fabInge Asselberghs,Imec,BelgiumOutlineBridging the gap from lab-to-fabTechnology development from materials screening to prototypingApproach followed by pilot line projects NanoIC pilot line and 2D-pilot line projectEducation and training2Moving R&D

2、from lab to the fab3Research resources,academiaCommercialization resources,industry“Valley of death”Pilot line projects to form the bridgeKNOWLEDGETECHNOLOGYCOLLABORATIONTimeResourcesTechnology development4progress requires extensive research into various fieldsNew materialsProcess modulesEquipmentp

3、atterning capabilitiesTRLLow HighFrom idea to prototyping5ROADMAPPINGEXPLORATION&VALIDATIONPATHFINDINGMATURATIONPRE-DEVELOPdevice&system conceptspecificationmaterial screeningmaterial evaluation in LABLAB2FAB equipmentmodule developmentdevice electrical validationbaseline maturity(CIP)final PDKproto

4、typingStart-Ups&SMEsEquipment&Material SuppliersAcademiaAcademiaIDMs&FoundriesOEMs,EDA,Design&System CompaniesThe NanoIC pilot line6Infrastructure&EquipmentTechnology developmentAccess&selectionEducation&work force developmentNanoIC will provide Europe with a beyond-2nm leading edge system-on-chip p

5、ilot line.It will develop advanced logic,novel memories and advanced interconnect technologies.CHIP INTERCONNECT ARCHITECTUREN2N3N5N7A2A3A5A7A10A14sub-A220232020201820252027202920312033203520372039DEVICE AND MATERIAL INNOVATIONS FinFETNanoSheetScaledIntroductionExtendedScaledIntroductionExtendedScal

6、edIntroductionExtendedCFET2DFET,?,ScaledIntroductionMetal Tracks 66654445544Back-side Power-Global interconnectsBack-side Power-Local signal linesCONTINUED DIMENSIONAL SCALING 40Metal Pitch nm 28232216-1218-1416-12211818-1614-100.33NA EUV0.55NA EUV0.75NA EUV?Back-side Metal Pitch estimate nm-160-65t