通过晶体管行为实现跨技术节点的模拟电路转移方法.pdf

1、Analog Circuit Transfer Method Across Technology Nodes via Transistor BehaviorHaochang Zhi1,Jintao Li2,Yun Li2,Weiwei Shan11.Southeast University,Nanjing,China 2.Shenzhen Institute for Advanced Study,UESTC,Shenzhen,China1ContentPreliminariesLinear circuit sizing methodologyLimitations of gm/iddesign

2、 approachChallenges in design methodologyFrameworkExperimental ResultConclusions2Linear Circuit Sizing Methodology3Vov-based 0!*28nm,ft2.5GHz,Vov0,remains intuitive as overdrive voltage Gm/idmethod extends design space to weak inversion region Process-dependent gm/idand L selection Less intuitive pa

3、rameter(No unit)selection(even for V*)ContentPreliminariesLinear circuit sizing methodologyLimitations of gm/ID design approachChallenges in design methodologyFrameworkInvoke fT:Transistor behavioral circuit representationTBCR-based sizing methodologyAnalog circuit transfer method across technology

4、nodesExperimental ResultConclusions7Challenge8To identify a design-centric parameter that minimizes the process-dependent variations in gm/id.To develop a dynamic optimization method that calculate optimal gm/idand L based on PVTs,thereby leveraging the advantages of gm/idmethodology.LUTX=gm/idY=id/

5、Wgmgm/idLWgmXG()W,Lgm=f(GBW,CL,)gmis only related to design and specificationsX:decouple with size and technology9DAC2023,gm/ID-RLDAC2020,GCN-RLLUTX=gm/idY=id/Wgmgm/idLWGCNActor&CriticVsat,Vth0Vfb,UCW,LPros:gm/id closely related to the performance of the circuit.Cons:gm/idand L process-dependentCons

6、:1.Lots of parameter with unclear performance relationship 2.Model was not scalingFT-Based Methodology11gmftW,Lgm=f(GBW,CL,);TBM()TBV:Transistor Behavioral Vector VGS,ft,gm,VDSVGS+-GateSourceDrainCGSgmVGSVDS+-TBCRgmidCgsftGateSourceDrainSmall-siganlSimplifyAnalog CircuitM1M2MNDefault=0gm,ft:key desi